

Qinhunangdao Intrinsic Crystal Technology Co., Ltd provides germanium wafer ( Ge wafer ) to micro- electronics and optoelectronics industry in diameter range from 2" to 4" with EPD< 5000 cm-2 and epi ready surface . Substrate are supplied as per SEMI standards , but non- standard thickness and finish are also available , depending on your particular application requirement . Germanium wafer is an excellent semiconductor material and suitable for many thin film and device applications. We can offer both electronics grade and IR grade Ge wafer to meet your unique requirement . Contact us for further product information
Ge Wafer Features :
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optical glass wafer
Specification | Measurement |
Material | Corning 7980 |
Diameter | 100mm (+/- 0.1mm) |
Thickness | 0.5mm (+/- 0.05mm) |
Bow | 20µm |
Warp | 25µm |
TTV | ≤ 2µm |
Surface Roughness | ≤ 10 Å rms |
Parallelism | < 2 arc seconds |
Surface Quality | 40-20 (both sides) |
Clear Aperture | 85% central |
Bevels | c-shape |
SEMI Notch | none |
SEMI Flat | none |

Specification | Measurement |
Material | Corning 7980 |
Diameter | 100mm (+/- 0.1mm) |
Thickness | 1mm (+/- 0.05mm) |
Bow | 10µm |
Warp | 15µm |
TTV | ≤ 2µm |
Surface Roughness | ≤ 10 Å rms |
Parallelism | < 2 arc seconds |
Surface Quality | 40-20 (both sides) |
Clear Aperture | 85% central |
Bevels | c-shape |
SEMI Notch | none |
SEMI Flat | none |
Specification | Measurement |
Material | BOROFLOAT® |
Diameter | 100mm (+/- 0.1mm) |
Thickness | 0.5mm (+/- 0.05mm) |
Bow | 20µm |
Warp | 25µm |
TTV | ≤ 2µm |
Surface Roughness | ≤ 12 Å rms |
Parallelism | < 2 arc seconds |
Surface Quality | 40-20 (both sides) |
Clear Aperture | 85% central |
Bevels | c-shape |
SEMI Notch | none |
SEMI Flat | none |